| Weight |
0.01 kg
|
| Type |
Transistor Silicon Pre-Biased-NPN - PNP |
| Case |
SOT363 |
| Manufacturer |
NXP Semiconductors |
| Polarity |
Pre-Biased-NPN*PNP |
| Maximum Collector Power Dissipation (Pc) |
0.2 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
50 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
0.5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
100 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| SMD Transistor Code |
PA* |
| Built in Bias Resistor R1 |
10 kOhm |
| Built in Bias Resistor R2 |
10 kOhm |
| Typical Resistor Ratio R1/R2 |
1 |
| SKU |
1439825 |