| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN Darlington |
| Case |
SOT89 |
| Manufacturer |
Philips |
| Vbr CEO |
30 |
| Max. PD (W) |
1.0 |
| Min hFE |
10k |
| Ic Max. (A) |
300m |
| @Ic (test) (A) |
10m |
| Icbo Max. @Vcb Max. (A) |
0.1u |
| Mat. |
Silicon Logic |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
125M |
| @VCE (test) |
5.0 |
| Oper. Temp (°C) Max. |
150 |
| Pinout Equivalence Number |
3-35 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
1.3 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
30 V |
| Maximum Emitter-Base Voltage |Veb| |
10 V |
| Maximum Collector Current |Ic max| |
0.5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
125 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20000 |
| SMD Transistor Code |
1N_P1N_p1N_p1N |
| SKU |
562203 |