| Type | Semiconductor | |
| Case | TO3 | |
| Manufacturer | Harris Semiconductor | |
| Vbr CBO | 200 | |
| Vbr CEO | 200 | |
| Max. PD (W) | 125 | |
| t(f) Max. (S) | 150n- | |
| Max. hFE | 90 | |
| Min hFE | 30 | |
| Ic Max. (A) | 7.0 | |
| @Ic (test) (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 250u | |
| Polarity | NPN | |
| Tr Max. (s) | 350n- | |
| R(sat) (Û) | 800m | |
| Derate Above 25°C | 714m | |
| Trans. Freq (Hz) Min. | 4.0M | |
| Oper. Temp (°C) Max. | 175 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 125 W | |
| Maximum Collector-Base Voltage |Vcb| | 200 V | |
| Maximum Collector-Emitter Voltage |Vce| | 200 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 7 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Transition Frequency (ft): | 2 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 10 | |
| SKU | 82987 | |