RFD4N06L

SKU: RFD4N06L

RFD4N06L is an N-channel power MOSFET in a TO-251AA (I-PAK) package. It is a 60 V, 4 A logic-level device with a maximum RDS(on) of 0.600 Ω at 1 A, 5 V, 30 W power dissipation and a −55 °C to +175 °C junction temperature.

Price:

£9.59 Inc. VAT (£7.99 Ex. VAT)

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Product specifications

Weight	0.01 kg
Type	Transistor N Channel MOSFET
Case	TO251
Manufacturer	Harris Semiconductor
Vbr DSS	60
Vbr GSS	10
Max. PD (W)	30#
td(on) Max (S)	20n
Derate (Amb) (W/°C)	200m
t(f) Max. (S)	160n
Id Max. (A)	4#
Tr Max. (s)	130n
R(ds) On (Û)	600m
t(stor) Max. (S)	40n
Oper. Temp (°C) Max.	175
Pinout Equivalence Number	4-109
Surface Mounted Yes/No	NO
SKU	86431

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