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RN1101ACT
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RN1101ACT

SKU: RN1101ACT
RN1101ACT Transistor Silicon Pre-Biased-NPN CASE: SOT883 MAKE: Toshiba
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT883
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.08 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.7 pF
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code C0
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1439945
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