RN1105F

SKU: RN1105F

RN1105F Transistor Silicon NPN CASE: SOT416 MAKE: Toshiba

Datasheet

RN1105F Datasheet

Product specifications

Weight	0.01 kg
Equivalent	RN1105
Type	Transistor Silicon NPN
Case	SOT416
Manufacturer	Toshiba
Polarity	Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc)	0.1 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	3 pF
Transition Frequency (ft):	250 MHz
Forward Current Transfer Ratio (hFE), MIN	80
SMD Transistor Code	XE
Built in Bias Resistor R1	2.2 kOhm
Built in Bias Resistor R2	47 kOhm
Typical Resistor Ratio R1/R2	0.047
SKU	361460

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