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RN1107MFV
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RN1107MFV

SKU: RN1107MFV
RN1107MFV SemiConductor - CASE: SOT623F MAKE: Toshiba
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT623F
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.7 pF
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code XH
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.21
SKU 586447
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