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RN1108CT
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RN1108CT

SKU: RN1108CT
RN1108CT Transistor Silicon Pre-Biased-NPN CASE: SOT883 MAKE: Toshiba
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT883
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.05 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 1.2 pF
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code L7
Built in Bias Resistor R1 22 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.47
SKU 1439967
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