RN1109MFV
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RN1109MFV

SKU: RN1109MFV
RN1109MFV Transistor Silicon Pre-Biased-NPN CASE: SOT623F MAKE: Toshiba
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT623F
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.7 pF
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code XJ
Built in Bias Resistor R1 47 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 2.1
SKU 586449
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