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RN1110MFV
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RN1110MFV

SKU: RN1110MFV
RN1110MFV Transistor Silicon Pre-Biased-NPN CASE: SOT623F MAKE: Toshiba
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT623F
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.7 pF
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code XK
Built in Bias Resistor R1 4.7 kOhm
SKU 586450
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