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RN1111MFV
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RN1111MFV

SKU: RN1111MFV
RN1111MFV SemiConductor - CASE: SOT623F MAKE: Toshiba
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT623F
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.7 pF
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code XM
Built in Bias Resistor R1 10 kOhm
SKU 586451
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