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RN1112F
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RN1112F

SKU: RN1112F
RN1112F Transistor Silicon NPN CASE: SOT416 MAKE: Toshiba
Datasheet
RN1112F Datasheet
Product specifications
Equivalent RN1112
Type Transistor Silicon NPN
Case SOT416
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code XN
Built in Bias Resistor R1 22 kOhm
SKU 361481
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