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RN1113CT
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RN1113CT

SKU: RN1113CT
RN1113CT Transistor Silicon Pre-Biased-NPN CASE: SOT883 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT883
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.05 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 1.2 pF
Forward Current Transfer Ratio (hFE), MIN 300
SMD Transistor Code LJ
Built in Bias Resistor R1 47 kOhm
SKU 1439982
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