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RN1115
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RN1115

SKU: RN1115
RN1115 Transistor Silicon NPN CASE: SOT416 MAKE: Toshiba
Datasheet
RN1115 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT416
Manufacturer Toshiba
@Temp. (test) (°C) 100#
Ir @ Diff. Temp (A) 3.0m
VRRM 1.0k
Polarity Pre-Biased-NPN
1-Cycle Surge Current (A) 350
@Temp (test) (°C) 125#
@Temp. (test) for Vf) 25
Vf Max. 1.2
I(out) (If AVG) Max. 15
@Volts (test) (V) 1.0k
@If (test) 15
Oper. Temp (°C) Max. 125#
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SMD Transistor Code XS
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.22
SKU 361487
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