RN1130MFV
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RN1130MFV

SKU: RN1130MFV
RN1130MFV Transistor Silicon Pre-Biased-NPN CASE: SOT723 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT723
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.7 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code X2
Built in Bias Resistor R1 100 kOhm
Built in Bias Resistor R2 100 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1440000
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