| Weight |
0.01 kg
|
| Case |
TO92 |
| Type |
Transistor Silicon Pre-Biased-NPN |
| Manufacturer |
Toshiba |
| Polarity |
Pre-Biased-NPN |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
50 V |
| Maximum Collector-Emitter Voltage |Vce| |
50 V |
| Maximum Emitter-Base Voltage |Veb| |
10 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
6 pF |
| Transition Frequency (ft): |
250 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| Built in Bias Resistor R1 |
4.7 kOhm |
| Built in Bias Resistor R2 |
4.7 kOhm |
| Typical Resistor Ratio R1/R2 |
1 |
| SKU |
83370 |