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Case | TO92 | |
Type | Transistor Silicon Pre-Biased-NPN | |
Manufacturer | Toshiba | |
Polarity | Pre-Biased-NPN | |
Maximum Collector Power Dissipation (Pc) | 0.3 W | |
Maximum Collector-Base Voltage |Vcb| | 50 V | |
Maximum Collector-Emitter Voltage |Vce| | 50 V | |
Maximum Emitter-Base Voltage |Veb| | 10 V | |
Maximum Collector Current |Ic max| | 0.1 A | |
Max. Operating Junction Temperature (Tj) | 150 °C | |
Collector Capacitance (Cc) | 6 pF | |
Transition Frequency (ft): | 250 MHz | |
Forward Current Transfer Ratio (hFE), MIN | 30 | |
Built in Bias Resistor R1 | 4.7 kOhm | |
Built in Bias Resistor R2 | 4.7 kOhm | |
Typical Resistor Ratio R1/R2 | 1 | |
SKU | 83370 |