RN1307

SKU: RN1307

RN1307 SI-NPN-DIGI - Case: SOT323 Make: Toshiba

Datasheet

RN1307 Datasheet

Product specifications

Weight	0.01 kg
Case	SOT323
Type	Transistor N Channel Silicon
Manufacturer	Toshiba
Equivalent	RN1307-SMD
Polarity	Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc)	0.1 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	3 pF
Transition Frequency (ft):	250 MHz
Forward Current Transfer Ratio (hFE), MIN	80
SMD Transistor Code	XH
Built in Bias Resistor R1	10 kOhm
Built in Bias Resistor R2	47 kOhm
Typical Resistor Ratio R1/R2	0.21
SKU	361518

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