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RN1310
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RN1310

SKU: RN1310
RN1310 SemiConductor - CASE: Standard MAKE: Toshiba
Price: £4.79
+ VAT 20% for UK purchases
£4.79
Qty
+ VAT 20% for UK purchases
Datasheet
RN1310 Datasheet
Product specifications
Type Transistor N Channel Silicon
Manufacturer Toshiba
Equivalent RN1310-SMD
Case SOT323
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code XK
Built in Bias Resistor R1 4.7 kOhm
SKU 361521