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RN1316
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RN1316

SKU: RN1316
RN1316 Transistor Silicon NPN CASE: SOT323 MAKE: Toshiba
Datasheet
RN1316 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT323
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SMD Transistor Code XT
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.47
SKU 361527
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