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RN1401
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RN1401

SKU: RN1401
RN1401 Transistor Silicon NPN CASE: SOT346 MAKE: Toshiba
Datasheet
RN1401 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT346
Manufacturer Toshiba
Min hFE 30
@Ic (test) (A) 10m
Mat. Silicon Logic
Polarity Pre-Biased-NPN
Mat. Struct. NPN
@VCE (V) 5
Pinout Equivalence Number N/A
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code XA
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 361530
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