RN1421
View detailed images (5)

RN1421

SKU: RN1421
RN1421 Transistor Silicon NPN CASE: SOT23 MAKE: Toshiba
Datasheet
RN1421 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code QA
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 1 kOhm
Typical Resistor Ratio R1/R2 1
SKU 361548
Back