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RN1425
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RN1425

SKU: RN1425
RN1425 Transistor Silicon NPN CASE: SOT23 MAKE: Toshiba
Datasheet
RN1425 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SMD Transistor Code QE
Built in Bias Resistor R1 0.47 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.047
SKU 361551
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