The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
RN1441

RN1441

SKU: RN1441
RN1441 Transistor Silicon Pre-Biased-NPN CASE: SOT23 MAKE: Toshiba
Datasheet
RN1441 Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT23
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 25 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.8 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code KA_KB
Built in Bias Resistor R1 5.6 kOhm
SKU 361554
Back