| Weight |
0.01 kg
|
| Type |
Transistor Silicon Pre-Biased-NPN |
| Case |
SOT23 |
| Manufacturer |
Toshiba |
| Polarity |
Pre-Biased-NPN |
| Maximum Collector Power Dissipation (Pc) |
0.2 W |
| Maximum Collector-Base Voltage |Vcb| |
50 V |
| Maximum Collector-Emitter Voltage |Vce| |
20 V |
| Maximum Emitter-Base Voltage |Veb| |
25 V |
| Maximum Collector Current |Ic max| |
0.3 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
4.8 pF |
| Transition Frequency (ft): |
30 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
200 |
| SMD Transistor Code |
KA_KB |
| Built in Bias Resistor R1 |
5.6 kOhm |
| SKU |
361554 |