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RN1444
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RN1444

SKU: RN1444
RN1444 Transistor Silicon Pre-Biased-NPN CASE: SOT23 MAKE: Toshiba
Datasheet
RN1444 Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT23
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 25 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.8 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code CA_CB
Built in Bias Resistor R1 2.2 kOhm
SKU 361557
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