| Weight |
0.01 kg
|
| Type |
Transistor Silicon Pre-Biased-NPN |
| Case |
SOT26 |
| Manufacturer |
Generic |
| Polarity |
Pre-Biased-NPN |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
15 V |
| Maximum Collector-Emitter Voltage |Vce| |
12 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
4 pF |
| Transition Frequency (ft): |
300 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
300 |
| SMD Transistor Code |
80 |
| Built in Bias Resistor R1 |
2.2 kOhm |
| SKU |
1440011 |