RN1711JE
View detailed images (1)

RN1711JE

SKU: RN1711JE
RN1711JE Transistor Silicon NPN CASE: SOT553 MAKE: Toshiba
Datasheet
RN1711JE Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT553
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code XM
Built in Bias Resistor R1 10 kOhm
SKU 361599
Back