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RN1909FE
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RN1909FE

SKU: RN1909FE
RN1909FE Transistor Silicon NPN CASE: SOT563 MAKE: Toshiba
Datasheet
RN1909FE Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT563
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 70 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code F8_XJ
Built in Bias Resistor R1 47 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 2.1
SKU 361617
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