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RN1910
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RN1910

SKU: RN1910
RN1910 Transistor Silicon NPN CASE: SOT363 MAKE: Toshiba
Datasheet
RN1910 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT363
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code XK
Built in Bias Resistor R1 4.7 kOhm
SKU 361618
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