RN1973

RN1973

SKU: RN1973
RN1973 Transistor Silicon Pre-Biased-NPN CASE: SOT363 MAKE: Toshiba
Datasheet
RN1973 Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT363
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code XXP
Built in Bias Resistor R1 47 kOhm
SKU 361644
Back