RN1973HFE
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RN1973HFE

SKU: RN1973HFE
RN1973HFE Transistor Silicon Pre-Biased-NPN CASE: SOT563F MAKE: Toshiba
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT563F
Manufacturer Toshiba
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SMD Transistor Code XX4
Built in Bias Resistor R1 47 kOhm
SKU 586457
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