RN2101

SKU: RN2101

RN2101 Transistor Silicon NPN CASE: SOT416 MAKE: Toshiba

Datasheet

RN2101 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	RN2101F
Type	Transistor Silicon NPN
Case	SOT416
Manufacturer	Toshiba
Polarity	Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc)	0.1 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	3 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SMD Transistor Code	YA
Built in Bias Resistor R1	4.7 kOhm
Built in Bias Resistor R2	4.7 kOhm
Typical Resistor Ratio R1/R2	1
SKU	361656

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