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RN2102MFV
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RN2102MFV

SKU: RN2102MFV
RN2102MFV SemiConductor - CASE: SOT623F MAKE: Toshiba
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon PNP
Case SOT623F
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.9 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SMD Transistor Code YB.
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 586459
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