RN2103MFV
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RN2103MFV

SKU: RN2103MFV
RN2103MFV Transistor Silicon PNP CASE: SOT623F MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case SOT623F
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.9 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code YC.
Built in Bias Resistor R1 22 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 1
SKU 586460
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