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RN2104
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RN2104

SKU: RN2104
RN2104 Transistor Silicon NPN CASE: SOT416 MAKE: Toshiba
Datasheet
RN2104 Datasheet
Product specifications
Equivalent RN2104F
Type Transistor Silicon NPN
Case SOT416
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code YD
Built in Bias Resistor R1 47 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 1
SKU 361665
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