RN2106MFV
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RN2106MFV

SKU: RN2106MFV
RN2106MFV Transistor Silicon PNP CASE: SOT623F MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case SOT623F
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.9 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code YF.
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 586463
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