The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
RN2110
View detailed images (8)

RN2110

SKU: RN2110
RN2110 Transistor Silicon NPN CASE: SOT416 MAKE: Toshiba
Datasheet
RN2110 Datasheet
Product specifications
Equivalent RN2110F
Type Transistor Silicon NPN
Case SOT416
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code YK
Built in Bias Resistor R1 4.7 kOhm
SKU 361683
Back