RN2111MFV
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RN2111MFV

SKU: RN2111MFV
RN2111MFV SemiConductor - CASE: SOT623F MAKE: Toshiba
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Product specifications
Type Transistor Silicon PNP
Case SOT623F
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.9 pF
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code YM.
Built in Bias Resistor R1 10 kOhm
SKU 586468
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