The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
RN2113MFV
View detailed images (5)

RN2113MFV

SKU: RN2113MFV
RN2113MFV SemiConductor - CASE: SOT623F MAKE: Toshiba
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon PNP
Case SOT623F
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.9 pF
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code YP.
Built in Bias Resistor R1 47 kOhm
SKU 586470
Back