RN2117
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RN2117

SKU: RN2117
RN2117 Transistor Silicon NPN CASE: SOT416 MAKE: Toshiba
Datasheet
RN2117 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT416
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code YU
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 2.1
SKU 361698
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