RN2426
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RN2426

SKU: RN2426
RN2426 Transistor Silicon NPN CASE: SOT23 MAKE: Toshiba
Datasheet
RN2426 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 13 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SMD Transistor Code RF
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 361754
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