RN2601
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RN2601

SKU: RN2601
RN2601 Transistor Silicon NPN CASE: SOT6 MAKE: Toshiba
Datasheet
RN2601 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT6
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code YA
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 361766
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