RN2606
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RN2606

SKU: RN2606
RN2606 Transistor Silicon NPN CASE: SOT6 MAKE: Toshiba
Datasheet
RN2606 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT6
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code YF
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 361771
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