RN2903
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RN2903

SKU: RN2903
RN2903 Transistor Silicon NPN CASE: SOT363 MAKE: Toshiba
Datasheet
RN2903 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT363
Manufacturer Toshiba
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code YC
Built in Bias Resistor R1 22 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 1
SKU 361803
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