RN47A3
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RN47A3

SKU: RN47A3
RN47A3 Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT353 MAKE: Toshiba
Datasheet
RN47A3 Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT353
Manufacturer Toshiba
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SMD Transistor Code 23
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 361856
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