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RN4907FE
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RN4907FE

SKU: RN4907FE
RN4907FE Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT563F MAKE: Toshiba
Datasheet
RN4907FE Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT563F
Manufacturer Toshiba
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code VH
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.21
SKU 361870
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