RN4909
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RN4909

SKU: RN4909
RN4909 Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT363 MAKE: Toshiba
Datasheet
RN4909 Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT363
Manufacturer Toshiba
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code VJ
Built in Bias Resistor R1 47 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 2.1
SKU 361873
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