RN4909FE
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RN4909FE

SKU: RN4909FE
RN4909FE Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT563F MAKE: Toshiba
Datasheet
RN4909FE Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT563F
Manufacturer Toshiba
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code VJ
Built in Bias Resistor R1 47 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 2.1
SKU 361874
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