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RN4911FE
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RN4911FE

SKU: RN4911FE
RN4911FE Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT563F MAKE: Toshiba
Datasheet
RN4911FE Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT563F
Manufacturer Toshiba
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code VM
Built in Bias Resistor R1 10 kOhm
SKU 361878
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