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RN4981FE
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RN4981FE

SKU: RN4981FE
RN4981FE Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT563 MAKE: Toshiba
Datasheet
RN4981FE Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT563
Manufacturer Toshiba
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code 6A
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 361881
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