RT1N137P
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RT1N137P

SKU: RT1N137P
RT1N137P Transistor Silicon NPN CASE: SOT89 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer Mitsubishi
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code N1
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 0.045
SKU 552682
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